Infineon Technologies has introduced a new series of radiation-resistant transistors based on gallium nitride (GaN), who received certification for use in space and defense systems. These transistors are designed to work in high levels of ionizing radiation, typical for space and military applications.
Main characteristics:
- Radiation resistance: Transistors are able to withstand high doses of ionizing radiation without loss of functionality, making them suitable for use in spacecraft, including satellites and interplanetary probes.
- High efficiency: Thanks to the use of GaN technology, transistors provide high efficiency in power transmission, which is especially important for systems with limited energy resources.
- Compactness and lightness: The small size and weight of transistors make it possible to reduce the total mass of electronic systems, which is a critical factor in missions.
Application:
These transistors can be used in a variety of systems, including:
- Satellite power systems
- Radio frequency amplifiers for communication equipment
- Spacecraft control and navigation systems
- Military radar and communication systems
Source: https://www.allaboutcircuits.com/news/infineons-rad-hard-gan-transistors-cleared-for-space-defense/